Low Forward Voltage III-Nitride Red Micro-Light-Emitting Diodes on a Strain Relaxed Template with an InGaN Decomposition Layer

III-nitride ultraviolet light-emitting diodes with delta doping

Generation of amber III-nitride based light emitting diodes by indium rich InGaN quantum dots with InGaN wetting layer and AlN encapsulation layer

Nanopatterned aluminum nitride template for high efficiency light-emitting diodes.

Nanopatterned aluminum nitride (NP-AlN) templates were used to enhance the light extraction efficiency of the light-emitting diodes (LEDs). Here, the NP-AlN interlayer between the sapphire substrate and GaN-based LED was used as an effective light outcoupling layer at the direction of bottom side and as a buffer layer for growth of GaN LEDs. The cross-sectional transmission electron microscopy ...

Comparing directed efficiency of III-nitride nanowire light- emitting diodes

III-nitride-based nanowires are a promising platform for solid-state lighting. III-nitride nanowires that act as natural waveguides to enhance directed extraction have previously been shown to be free of extended defects even on foreign substrates, such as silicon. While the efficiency of nanowire-based light-emitting diodes (LEDs) has been investigated, there has yet to be a comparison of hete...

III-nitride blue and ultraviolet photonic crystal light emitting diodes

We present results on enhancement of 460 nm blue and 340 nm UV optical power output in III-nitride light emitting diodes ~LEDs! using photonic crystals ~PCs! under current injection. Triangular arrays of the PCs with diameter/periodicity of 300/700 nm were patterned using electron-beam lithography and inductively coupled plasma dry etching. The total power at 20 mA of 3003300 mm unpackaged LED ...